The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
May. 25, 2004
Lee Chen, Cedar Creek, TX (US);
Hiromitsu Kambara, Austin, TX (US);
Nobuhiro Iwama, Lexington, MA (US);
Akiteru Ko, Beverly, MA (US);
Hiromasa Mochiki, Kofu, JP;
Masaaki Hagihara, Beverly, MA (US);
Lee Chen, Cedar Creek, TX (US);
Hiromitsu Kambara, Austin, TX (US);
Nobuhiro Iwama, Lexington, MA (US);
Akiteru Ko, Beverly, MA (US);
Hiromasa Mochiki, Kofu, JP;
Masaaki Hagihara, Beverly, MA (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for etching a high-k dielectric layer on a substrate in a plasma processing system is described. The high-k dielectric layer can, for example, comprise HfO. The method comprises elevating the temperature of the substrate above 200° C. (i.e., typically of order 400° C.), introducing a process gas comprising a halogen-containing gas, igniting a plasma from the process gas, and exposing the substrate to the plasma. The process gas can further include a reduction gas in order to improve the etch rate of HfOrelative to Si and SiO.