The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Nov. 20, 2006
Shigeo Ashigaki, Sagamihara, JP;
Hideaki Yamasaki, Kofu, JP;
Tomoyuki Sakoda, Kai, JP;
Mikio Suzuki, Nirasaki, JP;
Genji Nakamura, Nirasaki, JP;
Gert Leusink, Saltpoint, NY (US);
Shigeo Ashigaki, Sagamihara, JP;
Hideaki Yamasaki, Kofu, JP;
Tomoyuki Sakoda, Kai, JP;
Mikio Suzuki, Nirasaki, JP;
Genji Nakamura, Nirasaki, JP;
Gert Leusink, Saltpoint, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for integrating a metal-containing film in a semiconductor device, for example a gate stack. In one embodiment, the method includes providing a substrate in a process chamber, depositing the tungsten-containing film on the substrate at a first substrate temperature by exposing the substrate to a deposition gas containing a tungsten carbonyl precursor, heat treating the tungsten-containing film at a second substrate temperature greater than the first substrate temperature to remove carbon monoxide gas from the tungsten-containing film, and forming a barrier layer on the heat treated tungsten-containing film. Examples of tungsten-containing films include W, WN, WSi, and WC. Additional embodiments include depositing metal-containing films containing Ni, Mo, Co, Rh, Re, Cr, or Ru from the corresponding metal carbonyl precursors.