The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2010

Filed:

Dec. 22, 2008
Applicants:

Masaki Kurokawa, Tokyo, JP;

Katsuhiko Komori, Tokyo, JP;

Norifumi Kimura, Tokyo, JP;

Kazuhide Hasebe, Tokyo, JP;

Takehiko Fujita, Tokyo, JP;

Akitake Tamura, Tokyo, JP;

Yoshikazu Furusawa, Tokyo, JP;

Inventors:

Masaki Kurokawa, Tokyo, JP;

Katsuhiko Komori, Tokyo, JP;

Norifumi Kimura, Tokyo, JP;

Kazuhide Hasebe, Tokyo, JP;

Takehiko Fujita, Tokyo, JP;

Akitake Tamura, Tokyo, JP;

Yoshikazu Furusawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.

Published as:
KR20050037954A; JP2005123532A; TW200527518A; US2005181586A1; US2009104760A1; KR100907148B1; US7648895B2; TWI362063B;

Find Patent Forward Citations

Loading…