The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Oct. 09, 2007
Mamoru Nakasuji, Kanagawa, JP;
Nobuharu Noji, Kanagawa, JP;
Tohru Satake, Kanagawa, JP;
Toshifumi Kimba, Kanagawa, JP;
Hirosi Sobukawa, Kanagawa, JP;
Shoji Yoshikawa, Tokyo, JP;
Tsutomu Karimata, Kanagawa, JP;
Shin Oowada, Kanagawa, JP;
Mutsumi Saito, Kanagawa, JP;
Muneki Hamashima, Chiba, JP;
Toru Takagi, Kanagawa, JP;
Mamoru Nakasuji, Kanagawa, JP;
Nobuharu Noji, Kanagawa, JP;
Tohru Satake, Kanagawa, JP;
Toshifumi Kimba, Kanagawa, JP;
Hirosi Sobukawa, Kanagawa, JP;
Shoji Yoshikawa, Tokyo, JP;
Tsutomu Karimata, Kanagawa, JP;
Shin Oowada, Kanagawa, JP;
Mutsumi Saito, Kanagawa, JP;
Muneki Hamashima, Chiba, JP;
Toru Takagi, Kanagawa, JP;
Ebara Corporation, Tokyo, JP;
Abstract
An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.