The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Sep. 23, 2004
Jang-shiang Tsai, Taipei County, TW;
Yi-nien Su, Kaohsiung, TW;
Chung-chi Ko, Nantou, TW;
Jyu-horng Shieh, Hsin-Chu, TW;
Peng-fu Hsu, Hsinchu, TW;
Hun-jan Tao, HsinChu, TW;
Jang-Shiang Tsai, Taipei County, TW;
Yi-Nien Su, Kaohsiung, TW;
Chung-Chi Ko, Nantou, TW;
Jyu-Horng Shieh, Hsin-Chu, TW;
Peng-Fu Hsu, Hsinchu, TW;
Hun-Jan Tao, HsinChu, TW;
Taiwan Semiconductor Manufacturing Co. Ltd., Hsin-Chu, TW;
Abstract
A plasma processing operation uses a gas mixture of Nand Hto both remove a photoresist film and treat a low-k dielectric material. The plasma processing operation prevents degradation of the low-k material by forming a protective layer on the low-k dielectric material. Carbon from the photoresist layer is activated and caused to complex with the low-k dielectric, maintaining a suitably high carbon content and a suitably low dielectric constant. The plasma processing operation uses a gas mixture with Hconstituting at least 10%, by volume, of the gas mixture.