The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2009
Filed:
Nov. 14, 2005
Cheng-tung Huang, Kao-Hsiung, TW;
Chia-wen Liang, Hsin-Chu, TW;
Tzyy-ming Cheng, Hsin-Chu, TW;
Tzer-min Shen, Hsin-Chu, TW;
Yi-chung Sheng, Tai-Chung, TW;
Cheng-Tung Huang, Kao-Hsiung, TW;
Chia-Wen Liang, Hsin-Chu, TW;
Tzyy-Ming Cheng, Hsin-Chu, TW;
Tzer-Min Shen, Hsin-Chu, TW;
Yi-Chung Sheng, Tai-Chung, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method of fabricating strained-silicon transistors includes providing a semiconductor substrate, in which the semiconductor substrate includes a gate, at least a spacer, and a source/drain region; performing a first rapid thermal annealing (RTA) process; removing the spacer and forming a high tensile stress film over the surface of the gate and the source/drain region; and performing a second rapid thermal annealing process.