The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Feb. 22, 2006
Johnny Widodo, Singapore, SG;
Bei Chao Zhang, Singapore, SG;
Tong Qing Chen, Singapore, SG;
Yong Kong Siew, Sungai Pelek, SG;
Fan Zhang, Singapore, SG;
San Leong Liew, Singapore, SG;
John Sudijono, Singapore, SG;
Liang Choo Hsia, Singapore, SG;
Johnny Widodo, Singapore, SG;
Bei Chao Zhang, Singapore, SG;
Tong Qing Chen, Singapore, SG;
Yong Kong Siew, Sungai Pelek, SG;
Fan Zhang, Singapore, SG;
San Leong Liew, Singapore, SG;
John Sudijono, Singapore, SG;
Liang Choo Hsia, Singapore, SG;
Chartered Semiconductor Manufacturing, Ltd., Singapore, SG;
Abstract
A method of forming a barrier layer and cap comprised of CuSiN for an interconnect. We provide an interconnect opening in a dielectric layer over a semiconductor structure. We form a CuSiN barrier layer over the sidewalls and bottom of the interconnect opening by reacting with the first copper layer. We then form an interconnect over the CuSiN layer filling the interconnect opening. We can form a CuSiN cap layer on the top surface of the interconnect.