The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Dec. 20, 2006
Wen-kun Yang, Hsin-Chu, TW;
Chun-hui Yu, Tainan, TW;
Chao-nan Chou, Taipei, TW;
Chih-wei Lin, Gueiren Township, Tainan County, TW;
Ching-shun Huang, Chigtong Township, Yunlin County, TW;
Wen-Kun Yang, Hsin-Chu, TW;
Chun-Hui Yu, Tainan, TW;
Chao-Nan Chou, Taipei, TW;
Chih-Wei Lin, Gueiren Township, Tainan County, TW;
Ching-Shun Huang, Chigtong Township, Yunlin County, TW;
Advanced Chip Engineering Technology Inc., Hsinchu County, TW;
Abstract
The present invention provides a structure of elastic dielectric layers with certain through holes adjacent to the angle of a RDL of WLP to absorb the stress. The elastic dielectric layer is made from silicone based materials with specific range of CTE, elongation rate and hardness, which can improve the mechanical reliability of the structure during temperature cycling test. The CTE difference between the RDL and the elastic dielectric material still may cause the elastic dielectric layer crack; to solve this problem, The present invention further provides a structure of dielectric layers with certain open through holes adjacent to the curve portion of a RDL of WLP which can reduce the stress accumulated at area of the dielectric layer adjacent to the RDL/dielectric layer interface to solve the crack problem of the dielectric layer.