The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Sep. 15, 2003
Vi Vuong, Fremont, CA (US);
Junwei Bao, Santa Clara, CA (US);
Srinivas Doddi, Fremont, CA (US);
Emmanuel Drege, San Jose, CA (US);
Jin Wen, Sunnyvale, CA (US);
Sanjay Yedur, San Jose, CA (US);
Doris Chin, Milpitas, CA (US);
Nickhil Jakatdar, Los Altos, CA (US);
Lawrence Lane, San Jose, CA (US);
Vi Vuong, Fremont, CA (US);
Junwei Bao, Santa Clara, CA (US);
Srinivas Doddi, Fremont, CA (US);
Emmanuel Drege, San Jose, CA (US);
Jin Wen, Sunnyvale, CA (US);
Sanjay Yedur, San Jose, CA (US);
Doris Chin, Milpitas, CA (US);
Nickhil Jakatdar, Los Altos, CA (US);
Lawrence Lane, San Jose, CA (US);
Timbre Technologies, Inc., Santa Clara, CA (US);
Abstract
A hypothetical profile is used to model the profile of a structure formed on a semiconductor wafer to use in determining the profile of the structure using optical metrology. To select a hypothetical profile, sample diffraction signals are obtained from measured diffraction signals of structures formed on the wafer, where the sample diffraction signals are a representative sampling of the measured diffraction signals. A hypothetical profile is defined and evaluated using a sample diffraction signal from the obtained sample diffraction signals.