The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7387927 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 17, 2008

Filed:

Sep. 10, 2004
Applicants:

Robert B. Turkot, Jr., Hillsboro, OR (US);

Justin K. Brask, Portland, OR (US);

Jack Kavalieros, Portland, OR (US);

Mark L. Doczy, Beaverton, OR (US);

Matthew V. Metz, Hillsboro, OR (US);

Uday Shah, Portland, OR (US);

Suman Datta, Beaverton, OR (US);

Robert S. Chau, Beaverton, OR (US);

Inventors:

Robert B. Turkot, Jr., Hillsboro, OR (US);

Justin K. Brask, Portland, OR (US);

Jack Kavalieros, Portland, OR (US);

Mark L. Doczy, Beaverton, OR (US);

Matthew V. Metz, Hillsboro, OR (US);

Uday Shah, Portland, OR (US);

Suman Datta, Beaverton, OR (US);

Robert S. Chau, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

A metal layer is formed on a dielectric layer, which is formed on a substrate. After forming a masking layer on the metal layer, the exposed sides of the dielectric layer are covered with a polymer diffusion barrier.


Find Patent Forward Citations

Turkot, Jr., Robert. (2008). Reducing oxidation under a high k gate dielectric (U.S. Patent No. 7387927). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7387927

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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