The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
May. 11, 2005
Dae Hyeong Kim, Gyeonggi-Do, KR;
Seok Min Hong, Gyeonggi-Do, KR;
Jae Hyun Jeon, Gyeonsangbuk-Do, KR;
Ho Seong Kim, Gyeonggi-Do, KR;
Hyun Soo Park, Gyeonggi-Do, KR;
Un Gyu Paik, Seoul, KR;
Jae Gun Park, Gyeonggi-Do, KR;
Yong Kuk Kim, Seoul, KR;
Dae Hyeong Kim, Gyeonggi-Do, KR;
Seok Min Hong, Gyeonggi-Do, KR;
Jae Hyun Jeon, Gyeonsangbuk-Do, KR;
Ho Seong Kim, Gyeonggi-Do, KR;
Hyun Soo Park, Gyeonggi-Do, KR;
Un Gyu Paik, Seoul, KR;
Jae Gun Park, Gyeonggi-Do, KR;
Yong Kuk Kim, Seoul, KR;
K.C. Tech Co., Ltd., Anseong-si, KR;
IUCF-HYU, Seoul, KR;
Abstract
Disclosed herein is a polishing slurry and a method of producing the same. The polishing slurry has high selectivity in terms of a polishing speed of an oxide layer to that of a nitride layer used in CMP of an STI process which is essential to produce ultra highly integrated semiconductors having a design rule of 256 mega D-RAM or more, for example, a design rule of 0.13 μm or less. A method and a device for pre-treating polishing particles, a dispersing device and a method of operating the dispersing device, a method of adding a chemical additive and an amount added, and a device for transferring samples are properly employed to produce a high performance nano ceria slurry essential to CMP for a process of producing ultra highly integrated semiconductors of 0.13 μm or less, particularly, the STI process.