The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
May. 24, 2004
Ching-ya Wang, Hsin-Chu, TW;
Ping Chuang, Tao-Yuan, TW;
Sunny Wu, Hsin-Chu, TW;
Yu-liang Lin, Hsin-Chu, TW;
Hung-jung Tu, Hsin-Chu, TW;
Mei-sheng Zhou, Singapore, SG;
Henry Lo, Hsin-Chu, TW;
Ching-Ya Wang, Hsin-Chu, TW;
Ping Chuang, Tao-Yuan, TW;
Sunny Wu, Hsin-Chu, TW;
Yu-Liang Lin, Hsin-Chu, TW;
Hung-Jung Tu, Hsin-Chu, TW;
Mei-Sheng Zhou, Singapore, SG;
Henry Lo, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An organic layer, such as a porous low-K dielectric in an IC, contains pores open at its surface. To close the pores, the organic layer is contacted by a supercritical fluid that is a solvent for the layer. After a small amount of the surface and the wall of the open pores is solvated, a phase transition of the solvated organic material is effected at the surface to cover it with a dense, smooth, non-porous film that seals the open pores.