The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2008
Filed:
May. 06, 2005
Purakh Raj Verma, Singapore, SG;
Liang-choo Hsia, Singapore, SG;
Dong Kyun Sohn, Singapore, SG;
Guowei Zhang, Singapore, SG;
Chew Hoe Ang, Singapore, SG;
Yun Ling Tan, Singapore, SG;
Zhao Lun, Singapore, SG;
Jae Gon Lee, Singapore, SG;
Yung Fu Chong, Singapore, SG;
Purakh Raj Verma, Singapore, SG;
Liang-Choo Hsia, Singapore, SG;
Dong Kyun Sohn, Singapore, SG;
Guowei Zhang, Singapore, SG;
Chew Hoe Ang, Singapore, SG;
Yun Ling Tan, Singapore, SG;
Zhao Lun, Singapore, SG;
Jae Gon Lee, Singapore, SG;
Yung Fu Chong, Singapore, SG;
Chartered Semiconductor Manufacturing, Ltd., Singapore, SG;
Abstract
A method and apparatus for manufacturing a semiconductor device is provides a substrate having a first region and a second region. A sacrificial first gate is formed in the first region. Source/drain are formed in the first region. A second region gate dielectric is formed in the second region. A second region gate is formed on the second region gate dielectric. A second region source/drain is formed in the second region. A sacrificial layer is formed over the sacrificial first gate, the source/drain, the first region, and the second region. The sacrificial first gate is exposed. A gate space is formed by removing the sacrificial first gate. A first region gate dielectric is formed in the gate space. A first region gate is formed on the first region gate dielectric. The sacrificial layer is removed.