The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2008
Filed:
Nov. 01, 2002
Xiaoyi Chen, Foster City, CA (US);
Chentsau Ying, Cupertino, CA (US);
Padmapani C. Nallan, San Jose, CA (US);
Ajay Kumar, Sunnyvale, CA (US);
Ralph C. Kerns, San Carlos, CA (US);
Ying Rui, Sunnyvale, CA (US);
Chun Yan, San Jose, CA (US);
Guowen Ding, Sunnyvale, CA (US);
Wai-fan Yau, Los Altos, CA (US);
Xiaoyi Chen, Foster City, CA (US);
Chentsau Ying, Cupertino, CA (US);
Padmapani C. Nallan, San Jose, CA (US);
Ajay Kumar, Sunnyvale, CA (US);
Ralph C. Kerns, San Carlos, CA (US);
Ying Rui, Sunnyvale, CA (US);
Chun Yan, San Jose, CA (US);
Guowen Ding, Sunnyvale, CA (US);
Wai-Fan Yau, Los Altos, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for removal of metallic residue from a substrate after a plasma etch process in a semiconductor substrate processing system by cleaning the substrate in a hydrogen fluoride solution.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile