The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2007
Filed:
Nov. 22, 2004
Applicants:
Yung-sung Yen, Jhonghe, TW;
Kuei-shun Chen, Hsinchu, TW;
Chia-hsiang Lin, Hsinchu, TW;
Lawrence Lin, Jhonghe, TW;
Tsung Hsien Lin, Sun Chung, TW;
Inventors:
Yung-Sung Yen, Jhonghe, TW;
Kuei-Shun Chen, Hsinchu, TW;
Chia-Hsiang Lin, Hsinchu, TW;
Lawrence Lin, Jhonghe, TW;
Tsung Hsien Lin, Sun Chung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
An isotropic-diffusion filling method uses a thermal process on a result structure comprising a photoresist layer and an organic material layer to create a cross-linking layer there between, which minimizes step height differences between isolated and dense via-pattern regions for optimizing a subsequent trench process and simplifying process steps.