The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Sep. 24, 2004
Applicants:
Jyu-horng Shieh, Hsin-chu, TW;
Wen-chih Chiou, Miaoli, TW;
Peng-fu Hsu, Hsin-chu, TW;
Baw-ching Perng, Hsin-chu, TW;
Hun-jan Tao, Hsin chu, TW;
Chia-jen Chen, Chiayi, TW;
Inventors:
Jyu-Horng Shieh, Hsin-chu, TW;
Wen-Chih Chiou, Miaoli, TW;
Peng-Fu Hsu, Hsin-chu, TW;
Baw-Ching Perng, Hsin-chu, TW;
Hun-Jan Tao, Hsin chu, TW;
Chia-Jen Chen, Chiayi, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods and structures for critical dimension or profile measurement are disclosed. The method provides a substrate having periodic openings therein. Material layers are formed in the openings, substantially planarizing a surface of the substrate. A scattering method is applied to the substrate with the material layers for critical dimension (CD) or profile measurement.