The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
May. 27, 2005
Richard A. Conti, Katonah, NY (US);
Thomas F. Houghton, Marlboro, NY (US);
Michael F. Lofaro, Hopewell Junction, NY (US);
Jeffery B. Maxson, New Windsor, NY (US);
Ann H. Mcdonald, New Windsor, NY (US);
Yun-yu Wang, Poughquag, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Daewon Yang, Hopewell Junction, NY (US);
Richard A. Conti, Katonah, NY (US);
Thomas F. Houghton, Marlboro, NY (US);
Michael F. Lofaro, Hopewell Junction, NY (US);
Jeffery B. Maxson, New Windsor, NY (US);
Ann H. McDonald, New Windsor, NY (US);
Yun-Yu Wang, Poughquag, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Daewon Yang, Hopewell Junction, NY (US);
International Buisness Machines Corporation, Armonk, NY (US);
Abstract
The present invention relates to a bilayer cap structure for interconnect structures that comprise copper metallization or other conductive metallization. Such bilayer cap structure includes a first cap layer formed by an unbiased high density plasma (HDP) chemical vapor deposition process, and a second cap layer over the first cap layer, where the second cap layer is formed by a biased high density plasma (bHDP) chemical vapor deposition process. During the bHDP chemical vapor deposition process, a low AC bias power is applied to the substrate to increase the ion bombardment on the substrate surface and to induce resputtering of the capping material, thereby forming a seamless second cap layer with excellent reactive ion etching (RIE) selectivity.