The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Oct. 09, 2002
Thomas Laidig, Point Richmond, CA (US);
Jang Fung Chen, Cupertino, CA (US);
Xuelong Shi, Santa Clara, CA (US);
Ralph Schlief, Mountain View, CA (US);
Uwe Hollerbach, Franklin, MA (US);
Kurt E. Wampler, Sunnyvale, CA (US);
Thomas Laidig, Point Richmond, CA (US);
Jang Fung Chen, Cupertino, CA (US);
Xuelong Shi, Santa Clara, CA (US);
Ralph Schlief, Mountain View, CA (US);
Uwe Hollerbach, Franklin, MA (US);
Kurt E. Wampler, Sunnyvale, CA (US);
ASML Masktools B.V., Veldhoven, NL;
Abstract
A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.