The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2007

Filed:

May. 26, 2004
Applicants:

Sarah E. Kim, Portland, OR (US);

R. Scott List, Beaverton, OR (US);

Scot A. Kellar, Bend, OR (US);

Inventors:

Sarah E. Kim, Portland, OR (US);

R. Scott List, Beaverton, OR (US);

Scot A. Kellar, Bend, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 23/02 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of vertically stacking wafers is provided to form three-dimensional (3D) wafer stack. Such method comprising: selectively depositing a plurality of metallic lines on opposing surfaces of adjacent wafers; bonding the adjacent wafers, via the metallic lines, to establish electrical connections between active devices on vertically stacked wafers; and forming one or more vias to establish electrical connections between the active devices on the vertically stacked wafers and an external interconnect. Metal bonding areas on opposing surfaces of the adjacent wafers can be increased by using one or more dummy vias, tapered vias, or incorporating an existing copper (Cu) dual damascene process.

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