The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2006
Filed:
Jul. 25, 2003
Georg Roters, Dülmen, DE;
Steffen Frigge, Chemnitz, DE;
Sing Pin Tay, Fremont, CA (US);
Yao Zhi HU, San Jose, CA (US);
Regina Hayn, Bernsdorf, DE;
Jens-uwe Sachse, Dresden, DE;
Erwin Schoer, Catania, IT;
Wilhelm Kegel, Langebrück, DE;
Georg Roters, Dülmen, DE;
Steffen Frigge, Chemnitz, DE;
Sing Pin Tay, Fremont, CA (US);
Yao Zhi Hu, San Jose, CA (US);
Regina Hayn, Bernsdorf, DE;
Jens-Uwe Sachse, Dresden, DE;
Erwin Schoer, Catania, IT;
Wilhelm Kegel, Langebrück, DE;
Mattson Thermal Products GmbH, Dornstadt, DE;
Abstract
A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent material, comprising a metal, metal oxide or metal hydroxide such as tungsten, tungsten oxide or tungsten hydroxide, from said substrate from becoming deposited on or evaporating onto the transparent wall part of the treatment chamber.