The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2006

Filed:

Apr. 11, 2005
Applicants:

Yasuhiro Mitsui, Fuchuu, JP;

Yasutsugu Usami, Tokyo, JP;

Isao Kawata, Sayama, JP;

Yuya Toyoshima, Tokyo, JP;

Tadashi Otaka, Hitachinaka, JP;

Nobuyuki Iriki, Kodaira, JP;

Inventors:

Yasuhiro Mitsui, Fuchuu, JP;

Yasutsugu Usami, Tokyo, JP;

Isao Kawata, Sayama, JP;

Yuya Toyoshima, Tokyo, JP;

Tadashi Otaka, Hitachinaka, JP;

Nobuyuki Iriki, Kodaira, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 11/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A test pattern formed in a scribe line area of a wafer is irradiated with a light beam to measure the width thereof; the test pattern is irradiated with an electron beam so as to measure the width thereof; an amount of change in the width of the test pattern is calculated; a dummy pattern having the same width as that of a semiconductor device of the wafer is irradiated with an electron beam to measure the width thereof; and the width of a pattern is estimated by the use of the calculated amount of width change so as to determine the shape of the pattern. Thus, a shape measuring system and method capable of determining the shape of a micropattern in a semiconductor device without changing the dimensions of the micropattern can be provided.


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