The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
Mar. 18, 2002
Hsieh Yue Ho, HsinChu, TW;
Chih-cheng Wang, HsinChu, TW;
Hsiao Shih-yi, Taibau, TW;
Kang Tsung-kuei, Hsinchu, TW;
Bing-yue Tsui, Hsinchu, TW;
Chih-feng Huang, Changhua, TW;
Jann-shyang Liang, Kinmen, TW;
Ming-huan Tsai, Jubei, TW;
Hun-jan Tao, Hsinchu, TW;
Baw-ching Perng, Hsinchu, TW;
Hsieh Yue Ho, HsinChu, TW;
Chih-Cheng Wang, HsinChu, TW;
Hsiao Shih-Yi, Taibau, TW;
Kang Tsung-Kuei, Hsinchu, TW;
Bing-Yue Tsui, Hsinchu, TW;
Chih-Feng Huang, Changhua, TW;
Jann-Shyang Liang, Kinmen, TW;
Ming-Huan Tsai, Jubei, TW;
Hun-Jan Tao, Hsinchu, TW;
Baw-ching Perng, Hsinchu, TW;
Abstract
The present invention discloses an electrode structure of a light emitted diode and manufacturing method of the electrodes. After formed a pn junction of a light emitted diode on a substrate, a layer of SiO2 is deposited on the periphery of the die of the LED near the scribe line of the wafer, then a transparent conductive layer is deposited blanketly, then a layer of gold or AuGe etc. is formed with an opening on the center of the die. After forming alloy with the semiconductor by heat treatment to form ohmic contact, a strip of aluminum (Al) is formed on one side of the die on the front side for wire bonding and to be the positive electrode of the LED. The negative electrode is formed on the substrate by metal contact. Another form of the electrode structure of the present invention is making both the positive and negative electrodes on the front side of the LED by etching the p-type semiconductor of the pn junction and forming a strip of negative electrode on the n-type semiconductor, the positive electrode is formed on the p-type semiconductor.