Jann-Shyang Liang

Title: Jann-Shyang Liang: Innovator in LED Technology

Introduction

Jann-Shyang Liang is a notable inventor based in Kinmen, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of light-emitting diodes (LEDs). His innovative approaches have led to advancements in manufacturing methods that enhance the performance and efficiency of LED devices.

Latest Patents

Liang holds a patent titled "Method for wet etching of high k thin film at low temperature." This invention discloses an electrode structure of a light-emitting diode and the manufacturing method of the electrodes. The process involves forming a pn junction of a light-emitting diode on a substrate, followed by the deposition of a layer of SiO2 on the periphery of the die near the scribe line of the wafer. A transparent conductive layer is then deposited, and a layer of gold or AuGe is formed with an opening at the center of the die. The invention also details the formation of ohmic contact through heat treatment and the creation of aluminum strips for wire bonding.

Career Highlights

Jann-Shyang Liang is currently associated with Grand Plastic Technology Corporation Taiwan, where he continues to innovate in the field of LED technology. His work has been instrumental in improving the manufacturing processes of semiconductor devices, contributing to the overall advancement of the industry.

Collaborations

Liang has collaborated with notable colleagues, including Hsieh Yue Ho and Chih-Cheng Wang. Their combined expertise has fostered a productive environment for innovation and development within their projects.

Conclusion

Jann-Shyang Liang's contributions to LED technology and semiconductor manufacturing are noteworthy. His patent and ongoing work at Grand Plastic Technology Corporation Taiwan reflect his commitment to advancing the field. His innovative spirit continues to inspire future developments in technology.