The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Mar. 05, 2004
Hung-chih Tsai, Kaohsiung, TW;
Chien-chih Chou, Jhubei, TW;
Ying-ting Chang, Taichung, TW;
Che-jung Chu, Hsinchu, TW;
Kuo-chio Liu, Hsinchu, TW;
Hung-Chih Tsai, Kaohsiung, TW;
Chien-Chih Chou, Jhubei, TW;
Ying-Ting Chang, Taichung, TW;
Che-Jung Chu, Hsinchu, TW;
Kuo-Chio Liu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A high voltage PMOS device having an improved breakdown voltage is achieved. An asymmetrical high voltage integrated circuit structure comprises a gate electrode on a substrate and source and drain regions within the substrate on either side and adjacent to the gate electrode wherein the source region is encompassed by an n-well. A symmetrical high voltage integrated circuit structure comprises a gate electrode on a substrate, source and drain regions within the substrate on either side and adjacent to the gate electrode, and an n-well in the substrate underlying the gate electrode. The n-well in both structures shifts the breakdown point from the silicon surface to the bottom of the source or drain regions.