Company Filing History:
Years Active: 2006
Title: Ying-Ting Chang: Innovator in High Voltage Device Technology
Introduction
Ying-Ting Chang is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high voltage devices. His innovative work has led to the creation of a patented technology that enhances the performance of non-volatile memory cells.
Latest Patents
Ying-Ting Chang holds a patent for a "High voltage device embedded non-volatile memory cell and fabrication method." This invention focuses on achieving a high voltage PMOS device with an improved breakdown voltage. The patent describes an asymmetrical high voltage integrated circuit structure that includes a gate electrode on a substrate, with source and drain regions positioned on either side of the gate. The source region is surrounded by an n-well, which plays a crucial role in shifting the breakdown point from the silicon surface to the bottom of the source or drain regions. Additionally, a symmetrical high voltage integrated circuit structure is also detailed in the patent, further showcasing the versatility of his invention.
Career Highlights
Ying-Ting Chang is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading player in the semiconductor industry. His work at this esteemed company has allowed him to focus on cutting-edge technologies that push the boundaries of electronic devices. With a total of 1 patent to his name, he continues to contribute to advancements in high voltage device technology.
Collaborations
Throughout his career, Ying-Ting Chang has collaborated with talented individuals such as Hung-Chih Tsai and Chien-Chih Chou. These collaborations have fostered an environment of innovation and creativity, leading to the development of groundbreaking technologies in the semiconductor field.
Conclusion
Ying-Ting Chang's contributions to high voltage device technology exemplify the spirit of innovation in the semiconductor industry. His patented work not only enhances device performance but also paves the way for future advancements in non-volatile memory cells.