The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2006

Filed:

Sep. 17, 2003
Applicants:

Cem Basceri, Boise, ID (US);

Trung T. Doan, Pflugerville, TX (US);

Ronald A. Weimer, Boise, ID (US);

Kevin L. Beaman, Boise, ID (US);

Lyle D. Breiner, Meridian, ID (US);

Lingyi A. Zheng, Boise, ID (US);

Er-xuan Ping, Meridian, ID (US);

Demetrius Sarigiannis, Boise, ID (US);

David J. Kubista, Nampa, ID (US);

Inventors:

Cem Basceri, Boise, ID (US);

Trung T. Doan, Pflugerville, TX (US);

Ronald A. Weimer, Boise, ID (US);

Kevin L. Beaman, Boise, ID (US);

Lyle D. Breiner, Meridian, ID (US);

Lingyi A. Zheng, Boise, ID (US);

Er-Xuan Ping, Meridian, ID (US);

Demetrius Sarigiannis, Boise, ID (US);

David J. Kubista, Nampa, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 21/04 (2006.01); H01L 21/261 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure. The pressure within the enclosure is reduced to a second enclosure pressure while introducing a purge gas at a first flow rate. The second enclosure pressure may approach or be equal to a steady-state base pressure of the processing system at the first flow rate. After reducing the pressure, the purge gas flow may be increased to a second flow rate and the enclosure pressure may be increased to a third enclosure pressure. Thereafter, a flow of a second precursor gas may be introduced with a pressure within the enclosure at a fourth enclosure pressure; the third enclosure pressure is desirably within about 10 percent of the fourth enclosure pressure.


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