The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2006
Filed:
Apr. 13, 2004
Lain-jong LI, Hualien, TW;
Tien-i Bao, Hsin-Chu, TW;
Shwang-ming Jeng, Hsin-Chu, TW;
Syun-ming Jang, Hsin-Chu, TW;
Jun-lung Huang, Hsin-Chu, TW;
Jeng-cheng Liu, Hsin-Chu, TW;
Lain-Jong Li, Hualien, TW;
Tien-I Bao, Hsin-Chu, TW;
Shwang-Ming Jeng, Hsin-Chu, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Jun-Lung Huang, Hsin-Chu, TW;
Jeng-Cheng Liu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A new method of forming a composite etching stop layer is described. An etching stop layer is deposited on a substrate wherein the etching stop layer is selected from the group consisting of: silicon carbide, silicon nitride, SiCN, SiOC, and SiOCN. A TEOS oxide layer is deposited by plasma-enhanced chemical vapor deposition overlying the etching stop layer. The composite etching stop layer has improved moisture resistance, better etching selectivity, and lower dielectric constant than other etching stop layers.