The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Jul. 10, 2002
Mark J. Wihl, Tracy, CA (US);
George Q. Chen, Fremont, CA (US);
Jun YE, Palo Alto, CA (US);
Lih-huah Yiin, Mountain View, CA (US);
Pei-chun Chiang, Cupertino, CA (US);
Mark J. Wihl, Tracy, CA (US);
George Q. Chen, Fremont, CA (US);
Jun Ye, Palo Alto, CA (US);
Lih-Huah Yiin, Mountain View, CA (US);
Pei-Chun Chiang, Cupertino, CA (US);
KLA-Tencor Technologies Corporation, San Jose, CA (US);
Abstract
Techniques that use the design databases used in each of the expose/etch steps during construction of phase shift masks are described. A model or reference image is rendered, accounting for systematic variations, from the design databases to represent what a layer of the PSM should look like after processing. The reference image is compared to an optically acquired image of a specimen phase shift mask to find defects. The technique of the present invention can be used to inspect EAPSM, APSM and tritone masks. The technique inspects all layers in one pass and is therefore more efficient.