The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Jan. 17, 2002
Ming Xi, Milpitas, CA (US);
Paul Frederick Smith, San Jose, CA (US);
Ling Chen, Sunnyvale, CA (US);
Michael X. Yang, Palo Alto, CA (US);
Mei Chang, Saratoga, CA (US);
Fusen Chen, Cupertino, CA (US);
Christophe Marcadal, Santa Clara, CA (US);
Jenny C. Lin, Saratoga, CA (US);
Ming Xi, Milpitas, CA (US);
Paul Frederick Smith, San Jose, CA (US);
Ling Chen, Sunnyvale, CA (US);
Michael X. Yang, Palo Alto, CA (US);
Mei Chang, Saratoga, CA (US);
Fusen Chen, Cupertino, CA (US);
Christophe Marcadal, Santa Clara, CA (US);
Jenny C. Lin, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the present invention provide a process sequence and related hardware for filling a patterned feature on a substrate with a metal, such as copper. The sequence comprises first forming a reliable barrier layer in the patterned feature to prevent diffusion of the metal into the dielectric layer through which the patterned feature is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the barrier layer at the bottom of the patterned feature, depositing a second barrier layer, and then filling the patterned feature with a metal, such as copper.