The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2005
Filed:
Jan. 16, 2002
Chao-yuan Su, Kaohsiung, TW;
Chia-fu Lin, Hsin-Chu, TW;
Hsin-hui Lee, Kuohsiung, TW;
Yen-ming Chen, Hsin Chu, TW;
Kai-ming Ching, Taiping, TW;
Li-chih Chen, Taipei, TW;
Chao-Yuan Su, Kaohsiung, TW;
Chia-Fu Lin, Hsin-Chu, TW;
Hsin-Hui Lee, Kuohsiung, TW;
Yen-Ming Chen, Hsin Chu, TW;
Kai-Ming Ching, Taiping, TW;
Li-Chih Chen, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A method for protecting a semiconductor process wafer surface from contacting thermally degraded photoresist including providing a semiconductor process wafer having a process surface; forming a protective layer over selected areas of the process surface said protective layer including a resinous organic material having a glass transition temperature (Tg) that is about greater than a thermal treatment temperature; forming a photoresist layer over at least a portion of the protective layer to include a photolithographic patterning process; and subjecting the semiconductor process wafer to the thermal treatment temperature.