The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Aug. 28, 2003
Justin K. Brask, Portland, OR (US);
Mark L. Doczy, Beaverton, OR (US);
Scott A. Hareland, Tigard, OR (US);
John P. Barnak, Portland, OR (US);
Matthew V. Metz, Hillsboro, OR (US);
Jack Kavalieros, Portland, OR (US);
Robert S. Chau, Beaverton, OR (US);
Justin K. Brask, Portland, OR (US);
Mark L. Doczy, Beaverton, OR (US);
Scott A. Hareland, Tigard, OR (US);
John P. Barnak, Portland, OR (US);
Matthew V. Metz, Hillsboro, OR (US);
Jack Kavalieros, Portland, OR (US);
Robert S. Chau, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method for making a semiconductor device is described. That method comprises forming a metal oxide layer on a substrate, converting at least part of the metal oxide layer to a metal layer; and oxidizing the metal layer to generate a metal oxide high-k gate dielectric layer.