The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Sep. 06, 2002
Minoru Hanazaki, Hyogo, JP;
Keiichi Sugahara, Hyogo, JP;
Toshihiko Noguchi, Hyogo, JP;
Toshio Komemura, Hyogo, JP;
Masakazu Taki, Hyogo, JP;
Mutumi Tuda, Hyogo, JP;
Kenji Shintani, Hyogo, JP;
Minoru Hanazaki, Hyogo, JP;
Keiichi Sugahara, Hyogo, JP;
Toshihiko Noguchi, Hyogo, JP;
Toshio Komemura, Hyogo, JP;
Masakazu Taki, Hyogo, JP;
Mutumi Tuda, Hyogo, JP;
Kenji Shintani, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A high-frequency current detector of a plasma processing apparatus detects a high-frequency current produced when high-frequency power in the range that does not cause generation of plasma in a chamber is supplied from a high-frequency power supply source to the chamber. The high-frequency current detector outputs the detected high-frequency current to a computer. The computer compares the high-frequency current received from the high-frequency current detector with a reference high-frequency current. When the received high-frequency current matches the reference high-frequency current, the computer determines that the process performance is normal. Otherwise, the computer determines that the process performance is abnormal. In this way, high-frequency characteristics specific to the apparatus are detected and the process performance are evaluated based on the detected high-frequency characteristics.