The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Mar. 25, 2003
Zhengquan Tan, Cupertino, CA (US);
Dongqing LI, Santa Clara, CA (US);
Walter Zygmunt, San Jose, CA (US);
Tetsuya Ishikawa, Santa Clara, CA (US);
Zhengquan Tan, Cupertino, CA (US);
Dongqing Li, Santa Clara, CA (US);
Walter Zygmunt, San Jose, CA (US);
Tetsuya Ishikawa, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A substrate processing apparatus comprising a substrate processing chamber, a gas distribution system operatively coupled to the chamber, a high density plasma power source, a controller operatively coupled to the gas distribution system and the high density plasma power source and a memory coupled to the controller. The memory includes computer instructions embodied in a computer-readable format. The computer instructions comprise (i) instructions that control the gas distribution system to flow a process gas comprising a silane gas, an oxygen-containing source, an inert gas and a hydrogen-containing source that is either molecular hydrogen or a hydride gas that does not include silicon, boron or phosphorus and (ii) instructions that control the high density plasma source to form a plasma having an ion density of at least 1×10ions/cmfrom the process gas to deposit the silicon oxide layer over the substrate.