The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Jul. 15, 2002
Ju-hyung Lee, San Jose, CA (US);
Ping Xu, Fremont, CA (US);
Shankar Venkataraman, Santa Clara, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Fei Han, San Jose, CA (US);
Ellie Yieh, San Jose, CA (US);
Srinivas D. Nemani, San Jose, CA (US);
Kangsub Yim, Mountain View, CA (US);
Farhad K. Moghadam, Saratoga, CA (US);
Ashok K. Sinha, Palo Alto, CA (US);
Yi Zheng, San Jose, CA (US);
Ju-Hyung Lee, San Jose, CA (US);
Ping Xu, Fremont, CA (US);
Shankar Venkataraman, Santa Clara, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Fei Han, San Jose, CA (US);
Ellie Yieh, San Jose, CA (US);
Srinivas D. Nemani, San Jose, CA (US);
Kangsub Yim, Mountain View, CA (US);
Farhad K. Moghadam, Saratoga, CA (US);
Ashok K. Sinha, Palo Alto, CA (US);
Yi Zheng, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.