Fei Han

Title: Fei Han: Innovator in Dielectric Material Deposition

Introduction

Fei Han is a prominent inventor based in San Jose, CA, known for his contributions to the field of semiconductor manufacturing. He holds 2 patents that focus on advanced methods for depositing dielectric materials, which are crucial in the fabrication of integrated circuits.

Latest Patents

Fei Han's latest patents include innovative methods for depositing dielectric materials, specifically oxygen-doped silicon carbide, in damascene applications. One of his patents describes a method for processing a substrate by positioning it in a processing chamber and introducing a processing gas that includes an oxygen-containing organosilicon compound and carbon dioxide. This method allows for the deposition of an oxygen-doped dielectric material with an oxygen content of about 15 atomic percent or less, which can be utilized as a barrier layer in damascene or dual damascene applications.

Career Highlights

Fei Han is currently employed at Applied Materials, Inc., a leading company in the semiconductor equipment industry. His work focuses on developing advanced materials and processes that enhance the performance and reliability of semiconductor devices.

Collaborations

Fei has collaborated with notable colleagues such as Ju-Hyung Lee and Ping Xu, contributing to the advancement of technologies in the semiconductor field.

Conclusion

Fei Han's innovative work in dielectric material deposition has significantly impacted the semiconductor industry. His patents reflect a commitment to advancing technology and improving manufacturing processes.