The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Sep. 04, 2002
Chao-jie Tsai, Hsin-Chu, TW;
Jeng Yang Pan, Taipei, TW;
Chin-nan Wu, Ilan, TW;
Meng-chang Liu, Chia-Yi, TW;
Su-yu Yeh, Taipei, TW;
Chao-Jie Tsai, Hsin-Chu, TW;
Jeng Yang Pan, Taipei, TW;
Chin-Nan Wu, Ilan, TW;
Meng-Chang Liu, Chia-Yi, TW;
Su-Yu Yeh, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A method for forming salicides with lower sheet resistance and increased sheet resistance uniformity over a semiconductor process wafer including providing a semiconductor process wafer having exposed silicon containing areas at a process surface; depositing a metal layer including at least one of cobalt and titanium over the process surface; carrying out at least one thermal annealing process to react the metal layer and silicon to form a metal silicide over the silicon containing areas; and, wet etching unsilicided areas of the metal layer with a wet etching solution including phosphoric acid (HPO), nitric acid (HNO), and a carboxylic acid to leave salicides covering silicon containing areas at the process surface.