The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Aug. 26, 2003
David Cheung, Foster City, CA (US);
Wai-fan Yau, Mountain View, CA (US);
Robert P. Mandal, Saratoga, CA (US);
Shin-puu Jeng, Cupertino, CA (US);
Kuo-wei Liu, Campbell, CA (US);
Yung-cheng LU, San Jose, CA (US);
Michael Barnes, San Ramon, CA (US);
Ralf B. Willecke, Santa Clara, CA (US);
Farhad Moghadam, Los Gatos, CA (US);
Tetsuya Ishikawa, Santa Clara, CA (US);
Tze Wing Poon, San Francisco, CA (US);
David Cheung, Foster City, CA (US);
Wai-Fan Yau, Mountain View, CA (US);
Robert P. Mandal, Saratoga, CA (US);
Shin-Puu Jeng, Cupertino, CA (US);
Kuo-Wei Liu, Campbell, CA (US);
Yung-Cheng Lu, San Jose, CA (US);
Michael Barnes, San Ramon, CA (US);
Ralf B. Willecke, Santa Clara, CA (US);
Farhad Moghadam, Los Gatos, CA (US);
Tetsuya Ishikawa, Santa Clara, CA (US);
Tze Wing Poon, San Francisco, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.