The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2005
Filed:
Oct. 13, 2000
Kai-erik Elers, Helsinki, FI;
Suvi Päivikki Haukka, Helsinki, FI;
Ville Antero Saanila, Helsinki, FI;
Sari Johanna Kaipio, Järvenpää, FI;
Pekka Juha Soininen, Espoo, FI;
Kai-Erik Elers, Helsinki, FI;
Suvi Päivikki Haukka, Helsinki, FI;
Ville Antero Saanila, Helsinki, FI;
Sari Johanna Kaipio, Järvenpää, FI;
Pekka Juha Soininen, Espoo, FI;
ASM International N.V., Bilthoven, NL;
Abstract
This invention concerns a method for depositing transition metal nitride thin films by an Atomic Layer Deposition (ALD) type process. According to the method vapor-phase pulse of a source material, a reducing agent capable of reducing metal source material, and a nitrogen source material capable of reacting with the reduced metal source material are alternately and sequentially fed into a reaction space and contacted with the substrate. According to the invention as the reducing agent is used a boron compound which is capable of forming gaseous reaction byproducts when reacting with the metal source material.