The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Jun. 28, 2000
Tokuhisa Ohiwa, Kawasaki, JP;
Shoji Seta, Yokohama, JP;
Nobuo Hayasaka, Yokosuka, JP;
Katsuya Okumura, Yokohama, JP;
Akihiro Kojima, Yokohama, JP;
Junko Ohuchi, Yokohama, JP;
Tsukasa Azuma, Tokyo, JP;
Hideo Ichinose, Yokohama, JP;
Ichiro Mizushima, Yokohama, JP;
Tokuhisa Ohiwa, Kawasaki, JP;
Shoji Seta, Yokohama, JP;
Nobuo Hayasaka, Yokosuka, JP;
Katsuya Okumura, Yokohama, JP;
Akihiro Kojima, Yokohama, JP;
Junko Ohuchi, Yokohama, JP;
Tsukasa Azuma, Tokyo, JP;
Hideo Ichinose, Yokohama, JP;
Ichiro Mizushima, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
According to the present invention, there is provided a method of manufacturing a semiconductor device, where a soluble thin film which is soluble in a dissolving liquid is used. According to the method of the present invention, when a soluble thin film is formed between a film to be processed which should be patterned and a mask pattern, it becomes possible to remove the mask pattern by lifting-off. On the other hand, when the thin film is used for a dummy layer for forming an air wiring structure, the dummy layer can be removed without performing ashing using oxygen plasma.