The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2004

Filed:

Jul. 30, 2002
Applicant:
Inventors:

Kai-Erik Elers, Helsinki, FI;

Ville Antero Saanila, Helsinki, FI;

Sari Johanna Kaipio, Järvenpää, FI;

Pekka Juha Soininen, Espoo, FI;

Assignee:

ASM International N.V., Bilthoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/608 ;
U.S. Cl.
CPC ...
C23C 1/608 ;
Abstract

The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.

Published as:

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