The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 2004

Filed:

Dec. 21, 2001
Applicant:
Inventors:

Mahmoud M. Khojasteh, Poughkeepsie, NY (US);

Timothy M. Hughes, Marlboro, NY (US);

Ranee W. Kwong, Wappingers Falls, NY (US);

Pushkara Rao Varanasi, Poughkeepsie, NY (US);

William R. Brunsvold, Poughkeepsie, NY (US);

Margaret C. Lawson, LaGrangeville, NY (US);

Robert D. Allen, San Jose, CA (US);

David R. Medeiros, Dobbs Ferry, NY (US);

Ratnam Sooriyakumaran, San Jose, CA (US);

Phillip Brock, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/11 ; C08F / ;
U.S. Cl.
CPC ...
G03F 7/11 ; C08F / ;
Abstract

Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.


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