The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2004
Filed:
Dec. 03, 2002
Jaeyong Park, Sunnyvale, CA (US);
Hidehiko Shiraiwa, San Jose, CA (US);
Arvind Halliyal, Cupertino, CA (US);
Jean Y. Yang, Sunnyvale, CA (US);
Inkuk Kang, Saratoga, CA (US);
Tazrien Kamal, San Jose, CA (US);
Amir H. Jafarpour, Pleasanton, CA (US);
FASL, LLC, Sunnyvale, CA (US);
Abstract
Process for fabricating a SONOS flash memory device, including in one embodiment, forming a bottom oxide layer of an ONO structure on a semiconductor substrate, wherein the bottom oxide layer has a first oxygen vacancy content; treating the bottom oxide layer to decrease the first oxygen vacancy content to a second oxygen vacancy content; and depositing a dielectric charge-storage layer on the bottom oxide layer. In another embodiment, a process for fabricating a SONOS flash memory device includes forming a bottom oxide layer of an ONO structure on the semiconductor substrate under strongly oxidizing conditions, wherein the bottom oxide layer has a super-stoichiometric oxygen content and an oxygen vacancy content reduced relative to a bottom oxide layer formed by a conventional process; and depositing a dielectric charge-storage layer on the bottom oxide layer.