The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Mar. 28, 2003
Hiroyuki Shinada, Chofu, JP;
Yusuke Yajima, Kodaira, JP;
Hisaya Murakoshi, Suginami-ku, JP;
Masaki Hasegawa, Hachioji, JP;
Mari Nozoe, Oume, JP;
Atsuko Takafuji, Nerima-ku, JP;
Katsuya Sugiyama, Kashiwa, JP;
Katsuhiro Kuroda, Hachioji, JP;
Kaoru Umemura, Musashino, JP;
Yasutsugu Usami, Toshima-ku, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.