The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Jul. 31, 2003
Frederic Gaillard, Rue des Tallifardierest, FR;
Li-Qun Xia, Santa Clara, CA (US);
Tian-Hoe Lim, Santa Clara, CA (US);
Ellie Yieh, San Jose, CA (US);
Wai-Fan Yau, Mountain View, CA (US);
Shin-Puu Jeng, Tainan, TW;
Kuowei Liu, Santa Clara, CA (US);
Yung-Cheng Lu, Taipei, TW;
Applied Materials Inc., Santa Clara, CA (US);
Abstract
A method for processing a substrate comprising depositing a dielectric layer comprising silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.