Company Filing History:
Years Active: 2001-2006
Title: The Innovations of Inventor Tian-Hoe Lim
Introduction
Tian-Hoe Lim is a prominent inventor based in Santa Clara, California, renowned for his significant contributions to the field of chemical vapor deposition technology. With an impressive portfolio of 11 patents, Lim has made substantial advancements, particularly in the development of dielectric materials.
Latest Patents
Among his latest innovations is a patent titled "Method of decreasing the k value in SiOC layer deposited by chemical vapor deposition." This method outlines a unique process for treating substrates by depositing a dielectric layer composed of silicon, oxygen, and carbon. The dielectric layer exhibits a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3. Lim’s approach further includes the deposition of a silicon and carbon-containing layer onto the dielectric layer, resulting in a significant reduction of the dielectric constant. This is achieved by employing a reaction of an organosilicon compound with three or more methyl groups, followed by the deposition of an amorphous hydrogenated silicon carbide layer using alkylsilane in a plasma of an inert gas.
Career Highlights
Tian-Hoe Lim is currently employed at Applied Materials, Inc., where he has been instrumental in pioneering new technologies that enhance semiconductor manufacturing processes. His work not only improves material properties but also pushes the boundaries of existing technologies, solidifying his status as a leading inventor in his field.
Collaborations
Throughout his career, Lim has collaborated with respected colleagues, including Li-Qun Xia and Ellie Y Yieh. These partnerships have fostered a creative environment, resulting in innovative solutions that benefit the industry and further the capabilities of chemical vapor deposition.
Conclusion
Tian-Hoe Lim's expertise and innovative spirit continue to make a lasting impact on the world of materials science. His focus on reducing dielectric constants in silicon-oxygen-carbon layers showcases not only his inventiveness but also his commitment to advancing technology in semiconductor applications. As he continues to develop and refine his techniques, Lim remains a key figure in the realm of innovation.