The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2004
Filed:
May. 17, 2002
Makarem A. Hussein, Beaverton, OR (US);
Ruth Brain, Portland, OR (US);
Robert Turklot, Hillsboro, OR (US);
Sam Sivakumar, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method of integrating a polymeric interlayer dielectric. The method comprises forming a dielectric layer comprising a polymer on a conductive layer formed on a substrate. A sacrificial hard mask is then formed on the dielectric layer. A first photoresist layer is then patterned on the sacrificial hard mask to define a first etched region, which is formed through the dielectric layer while substantially all of the first photoresist layer is removed. A sacrificial fill layer then covers the sacrificial hard mask and fills the first etched region. A second photoresist layer is patterned over the sacrificial fill layer to define a second etched region which is formed through the sacrificial fill layer and the dielectric layer while substantially all of the second photoresist layer and the sacrificial fill layer are simultaneously removed.