The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2004

Filed:

Sep. 11, 2002
Applicant:
Inventors:

Mahmoud M. Khojasteh, Poughkeepsie, NY (US);

Ranee W. Kwong, Wappingers Falls, NY (US);

Kuang-Jung Chen, Poughkeepsie, NY (US);

Pushkara Rao Varanasi, Poughkeepsie, NY (US);

Robert D. Allen, San Jose, CA (US);

Phillip Brock, Sunnyvale, CA (US);

Frances Houle, Fremont, CA (US);

Ratnam Sooriyakumaran, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C 1/73 ; G03F 7/039 ; G03F 7/20 ; G03F 7/30 ; G03F 7/36 ;
U.S. Cl.
CPC ...
G03C 1/73 ; G03F 7/039 ; G03F 7/20 ; G03F 7/30 ; G03F 7/36 ;
Abstract

The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.


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