The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
Mar. 30, 2001
Kuei-Jen Chang, Hsin-Chu, TW;
Yuan-Ko Hwang, Huilan, TW;
Juei-Wen Lin, Tai-Chung, TW;
Jen-Yung Tseng, Tai-Ton, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A method for in-situ descum/hot bake/dry etch a polyimide photoresist layer and a passivation layer in a singe process chamber is disclosed. A process chamber that can be used for conducting in-situ a descum, a hot bake and a dry etch process sequentially in the same chamber is also disclosed. In the method, a process chamber equipped with a wafer platform and a wafer backside heating and cooling device is first provided, followed by the step of positioning a wafer that has a passivation layer and a patterned polyimide photoresist layer on top of the platform. An oxygen plasma is then generated in the chamber cavity to conduct a descum process, followed by flowing a heated inert gas onto a backside of the wafer to conduct a hot bake process. A cooling inert gas is then flown onto the wafer backside and an etchant gas is flown into the chamber to conduct a dry etch process for forming a via opening in the wafer.