Tai-Ton, Taiwan

Jen-Yung Tseng

This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jen-Yung Tseng. Retrieved from https://idiyas.com/inventor/jen-yung-tseng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Innovations of Inventor Jen-Yung Tseng

Introduction

Jen-Yung Tseng is a notable inventor based in Tai-Ton, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent related to photoresist processing.

Latest Patents

One of his key patents is titled "Method and apparatus for in-situ descum/hot bake/dry etch photoresist/polyimide layer." This patent describes a method for in-situ descum, hot bake, and dry etch processes for a polyimide photoresist layer and a passivation layer within a single process chamber. The invention allows for the sequential execution of these processes, enhancing efficiency in semiconductor fabrication.

Career Highlights

Jen-Yung Tseng is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading player in the semiconductor industry. His work has been instrumental in advancing the techniques used in the manufacturing of semiconductor devices.

Collaborations

He has collaborated with notable colleagues such as Kuei-Jen Chang and Yuan-Ko Hwang, contributing to various projects that aim to improve semiconductor processing techniques.

Conclusion

Jen-Yung Tseng's innovative work in semiconductor manufacturing, particularly his patent on in-situ processing methods, showcases his expertise and commitment to advancing technology in this critical field. His contributions continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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