Company Filing History:
Years Active: 2002-2004
Title: Innovations by Juei-Wen Lin
Introduction
Juei-Wen Lin is a notable inventor based in Tai-Chung, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patents. With a total of 2 patents, Lin's work focuses on advanced methods for processing materials in semiconductor fabrication.
Latest Patents
One of Lin's latest patents is titled "Method and apparatus for in-situ descum/hot bake/dry etch photoresist/polyimide layer." This patent discloses a method for conducting a descum, hot bake, and dry etch process sequentially within a single process chamber. The process involves generating an oxygen plasma to conduct a descum process, followed by a heated inert gas for hot baking, and finally, a cooling inert gas and etchant gas for dry etching to form a via opening in the wafer.
Another significant patent by Lin is the "Method of etching a polysilicon layer during the stripping of the photoresist shape used as an etch mask to create an opening to an underlying fuse structure." This process creates a fuse structure opening in a stack of materials, utilizing a photoresist shape as an etch mask. The method ensures that polysilicon spacer formation is avoided, which is crucial for maintaining the integrity of the conductive fuse structure.
Career Highlights
Juei-Wen Lin is currently employed at Taiwan Semiconductor Manufacturing Company Ltd. His work has been instrumental in advancing semiconductor processing techniques, contributing to the efficiency and effectiveness of manufacturing processes.
Collaborations
Lin has collaborated with several professionals in his field, including Yuan-Ko Hwang and Kuei-Jen Chang. These collaborations have fostered innovation and development in semiconductor technologies.
Conclusion
Juei-Wen Lin's contributions to semiconductor manufacturing through his patents highlight his expertise and innovative spirit. His work continues to influence the industry, paving the way for future advancements in technology.